The dimers stay intact: a quantitative photoelectron study of the adsorption system Si{100}(2x1)-C2H4

被引：60

作者：

Baumgaertel, P. ^{[1
]}

Lindsay, R. ^{[1
]}

Schaff, O. ^{[1
]}

Giessel, T. ^{[1
]}

Terborg, R. ^{[1
]}

Hoeft, J. T. ^{[1
]}

Polcik, M. ^{[1
,5
]}

Bradshaw, A. M. ^{[1
]}

Carbone, M. ^{[2
]}

Piancastelli, M. N. ^{[2
]}

Zanoni, R. ^{[3
]}

Toomes, R. L. ^{[4
]}

Woodruff, D. P. ^{[4
]}

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Univ Roma Tor Vergata, Dept Chem Sci & Technol, I-00133 Rome, Italy

[3] Univ Roma La Sapienza, Dept Chem, I-00185 Rome, Italy

[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[5] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic

来源：

NEW JOURNAL OF PHYSICS | 1999年 / 1卷

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1088/1367-2630/1/1/320

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using the technique of photoelectron diffraction in the scanned energy mode we show that the Si dimer separation on the Si{100} surface following the adsorption of ethene (ethylene) is 2.36(+/- 0.21) angstrom. This value is only very slightly larger than on the clean surface and shows that the dimer remains intact, thus providing a clear quantitative experimental resolution of a long controversy in the literature. The C-C and C-Si separations are 1.62 +/- 0.08 angstrom and 1.90 +/- 0.01 angstrom, respectively, the former indicating a bond order of less than one.

引用

页码：20.1 / 20.15

页数：15

共 52 条

[1] THE LOCAL GEOMETRY OF REACTANT AND PRODUCT IN A SURFACE-REACTION - THE DEHYDROGENATION OF ADSORBED ETHYLENE ON NI(III) [J].

BAO, S ;

HOFMANN, P ;

SCHINDLER, KM ;

FRITZSCHE, V ;

BRADSHAW, AM ;

WOODRUFF, DP ;

CASADO, C ;

ASENSIO, MC .

SURFACE SCIENCE, 1995, 323 (1-2) :19-29

[2] Structure determination of the (√3 x √3) R30° boron phase on the Si(111) surface using photoelectron diffraction [J].

Baumgärtel, P ;

Paggel, JJ ;

Hasselblatt, M ;

Horn, K ;

Fernandez, V ;

Schaff, O ;

Weaver, JH ;

Bradshaw, AM ;

Woodruff, DP ;

Rotenberg, E ;

Denlinger, J .

PHYSICAL REVIEW B, 1999, 59 (20) :13014-13019

[3] Density functional investigation of the geometric and electronic structure of ethylene adsorbed on Si(001) [J].

Birkenheuer, U ;

Gutdeutsch, U ;

Rösch, N ;

Fink, A ;

Gokhale, S ;

Menzel, D ;

Trischberger, P ;

Widdra, W .

JOURNAL OF CHEMICAL PHYSICS, 1998, 108 (23) :9868-9876

[4] Structure determination of ammonia on Cu(110) - a low-symmetry adsorption site [J].

Booth, NA ;

Davis, R ;

Toomes, R ;

Woodruff, DP ;

Hirschmugl, C ;

Schindler, KM ;

Schaff, O ;

Fernandez, V ;

Theobald, A ;

Hofmann, P ;

Lindsay, R ;

Giessel, T ;

Baumgartel, P ;

Bradshaw, AM .

SURFACE SCIENCE, 1997, 387 (1-3) :152-159

[5]

Briggs GAD, 1999, SURF SCI REP, V33, P3

[6] ETHYLENE ADSORPTION AND DECOMPOSITION ON SI(100) 2 X-1 - A SEMIEMPIRICAL QUANTUM-CHEMICAL STUDY [J].

CAO, PL ;

ZHOU, RH .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (18) :2887-2896

[7] MOLECULAR-DYNAMICS WITH COMBINED QUANTUM AND EMPIRICAL POTENTIALS - C2H2 ADSORPTION ON SI(100) [J].

CARMER, CS ;

WEINER, B ;

FRENKLACH, M .

JOURNAL OF CHEMICAL PHYSICS, 1993, 99 (02) :1356-1372

[8]

Casaletto MP, IN PRESS

[9] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47

[10] DIRECT DETERMINATION OF ABSOLUTE MONOLAYER COVERAGES OF CHEMISORBED C2H2 AND C2H4 ON SI(100) [J].

CHENG, CC ;

WALLACE, RM ;

TAYLOR, PA ;

CHOYKE, WJ ;

YATES, JT .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) :3693-3699

← 1 2 3 4 5 6 →