Study of amorphous tin oxide thin films for ISFET applications

被引：71

作者：

Liao, HK

Chou, JC

Chung, WY

Sun, TP

Hsiung, SK ^{[1
]}

机构：

[1] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan

[2] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu 640, Yunlin, Taiwan

[3] Chung Yu Jr Coll Business & Adm, Dept Management Informat Syst, Keelung 201, Taiwan

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 50卷 / 02期

关键词：

tin oxide (SnO2); thermal evaporation; pH-ISFET; C-V; pH sensitivity;

D O I：

10.1016/S0925-4005(98)00162-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this study, an amorphous tin oxide (SnO2) obtained by thermal evaporation was used as a pH-sensitive material for pH-ISFETs. Capacitance-voltage (C-V) curves of the EIS diode were used to evaluate pH response of SnO2 thin film. Subsequently, SnO2/SiO2 gate ISFET was fabricated and pH sensitivity was determined through a shift in the: threshold voltage of an ISFET sensor. The experimental data show that the SnO2/SiO2 gate ISFET sensors have a linear pH response of about 58 mV pH(-1) in a concentration range between pH 2 and pH 10. In addition, the other characteristics of this sensor, such as temperature effect, drift effect, hysteresis and response time were also investigated in this paper. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：104 / 109

页数：6

共 17 条

[1] DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS [J].