Electric field and plasma effects on proton-irradiated GaAs detector performance

被引：6

作者：

Nava, F

Vanni, P

Biggeri, U

Vittone, E

Lanzieri, C

Bertuccio, G

Canali, C

机构：

[1] Univ Modena, Dept Phys, I-41100 Modena, Italy

[2] INFN Bologna, I-41100 Modena, Italy

[3] Univ Florence, Dept Energet, I-50139 Florence, Italy

[4] INFN Firenze, I-50139 Florence, Italy

[5] Univ Turin, Dept Phys, I-10125 Turin, Italy

[6] INFN Torino, I-10125 Turin, Italy

[7] Alenia SpA, Direz Ric, Rome, Italy

[8] Politecn Milan, Dept Elect & Informat, I-20133 Milan, Italy

[9] INFN Milano, I-20133 Milan, Italy

[10] Univ Modena, Dept Engn Sci, I-41100 Modena, Italy

[11] INFM, I-41100 Modena, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1998年 / 410卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(98)00144-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effect of the bulk damage on the detector performance was determined as a function of the non-ionising energy loss of high-energy protons in semi-insulating GaAs. The study was performed by measuring the charge collection efficiency of gamma-rays, protons, beta- and alpha-particles on 24GeV/c proton irradiated detectors fabricated on Liquid Encapsulated Czochralski grown GaAs. The results obtained let us explain the effect of the electric field strength and the plasma on the collection of the charge carriers. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：68 / 73

页数：6

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