Growth of ultrathin BaTiO3 films on SrTiO3 and MgO substrates

被引：20

作者：

Yoneda, Y ^{[1
]}

Okabe, T ^{[1
]}

Sakaue, K ^{[1
]}

Terauchi, H ^{[1
]}

机构：

[1] Kwansei Gakuin Univ, Dept Phys, Nishinomiya, Hyogo 662, Japan

来源：

SURFACE SCIENCE | 1998年 / 410卷 / 01期

基金：

日本学术振兴会;

关键词：

barium titanate (BaTiO3); reflection high-energy electron diffraction (RHEED); surface relaxation and reconstruction; surface structure; morphology; roughness and topography; X-ray scattering; diffraction and reflection;

D O I：

10.1016/S0039-6028(98)00296-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Epitaxial BaTiO3 thin films were successfully grown on SrTiO3 (001) and MgO (001) substrates by molecular beam epitaxy. These 50 ML thickness BaTiO3 films were prepared under the same growth conditions on both substrates. The films were characterized by in situ reflection high-energy-electron diffraction observations and ex situ X-ray diffraction measurements. The epitaxial relationship between the BaTiO3 films and both substrates was cube-on-cube, though the cubic lattice parameter of BaTiO3 was larger than that of SrTiO3, and smaller than that of MgO at the growth temperature (700 degrees C). In addition, the films on both substrates were found to have a highly c-axis-oriented tetragonal phase at room temperature. However, despite the finding that the lattice parameters of these films were very close to the bulk value of the tetragonal phase, the crystal quality as found to depend strongly on the magnitude of the lattice mismatch. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：62 / 69

页数：8

共 16 条

[1] ATOMIC LAYER GROWTH OF OXIDE THIN-FILMS WITH PEROVSKITE-TYPE STRUCTURE BY REACTIVE EVAPORATION [J].

IIJIMA, K ;

TERASHIMA, T ;

BANDO, Y ;

KAMIGAKI, K ;

TERAUCHI, H .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) :2840-2845

[2] PREPARATION OF FERROELECTRIC BATIO3 THIN-FILMS BY ACTIVATED REACTIVE EVAPORATION [J].

IIJIMA, K ;

TERASHIMA, T ;

YAMAMOTO, K ;

HIRATA, K ;

BANDO, Y .

APPLIED PHYSICS LETTERS, 1990, 56 (06) :527-529

[3]

Iijima K., 1985, JPN J APPL PHYS S, V24, P482

[4] STRUCTURAL CHARACTERIZATION OF EPITAXIAL BATIO3 THIN-FILMS GROWN BY SPUTTER-DEPOSITION ON MGO(100) [J].

KIM, S ;

HISHITA, S ;

KANG, YM ;

BAIK, S .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) :5604-5608

[5] EPITAXIAL-GROWTH OF BATIO3 THIN-FILMS AND THEIR INTERNAL-STRESSES [J].

LEE, ST ;

FUJIMURA, N ;

ITO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5168-5171

[6] INTERFACE STABILITY AND THE GROWTH OF OPTICAL-QUALITY PEROVSKITES ON MGO [J].

MCKEE, RA ;

WALKER, FJ ;

SPECHT, ED ;

JELLISON, GE ;

BOATNER, LA ;

HARDING, JH .

PHYSICAL REVIEW LETTERS, 1994, 72 (17) :2741-2744

[7] EPITAXIAL BATIO3 MGO STRUCTURE GROWN ON GAAS(100) BY PULSED-LASER DEPOSITION [J].

NASHIMOTO, K ;

FORK, DK ;

PONCE, FA ;

TRAMONTANA, JC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4099-4102

[8] STRAINED SRTIO3/BATIO3 SUPERLATTICES FORMED BY LASER-ABLATION TECHNIQUE AND THEIR HIGH DIELECTRIC-PROPERTIES [J].

TABATA, H ;

TANAKA, H ;

KAWAI, T ;

OKUYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2A) :544-547

[9] FORMATION OF ARTIFICIAL BATIO3/SRTIO3 SUPERLATTICES USING PULSED-LASER DEPOSITION AND THEIR DIELECTRIC-PROPERTIES [J].

TABATA, H ;

TANAKA, H ;

KAWAI, T .

APPLIED PHYSICS LETTERS, 1994, 65 (15) :1970-1972

[10] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS DURING EPITAXIAL-GROWTH OF HIGH-TEMPERATURE SUPERCONDUCTING OXIDES [J].

TERASHIMA, T ;

BANDO, Y ;

IIJIMA, K ;

YAMAMOTO, K ;

HIRATA, K ;

HAYASHI, K ;

KAMIGAKI, K ;

TERAUCHI, H .

PHYSICAL REVIEW LETTERS, 1990, 65 (21) :2684-2687

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