Electrical characterization of organic based transistors:: stability issues

被引:51
作者
Gomes, HL
Stallinga, P
Dinelli, F
Murgia, M
Biscarini, F
de Leeuw, DM
Muccini, M
Müllen, K
机构
[1] Univ Algarve, Fac Sci & Technol, P-8000 Faro, Portugal
[2] CNR, Ist Studio mat Nanostrutturati, I-40129 Bologna, Italy
[3] Phillips Res, NL-5656 AA Eindhoven, Netherlands
[4] Max Planck Inst Polymer Res, D-55128 Mainz, Germany
关键词
organic transistor; stabilization; electrical properties; amorphous; silicones;
D O I
10.1002/pat.558
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
An investigation into the stability of metal insulator semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow a stretched-hyperbola type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T approximate to 220 K and the other at T approximate to 300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and alpha-sexithiophene deposition parameters. Copyright (c) 2005 John Wiley A Sons, Ltd.
引用
收藏
页码:227 / 231
页数:5
相关论文
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