Electrical characterization of organic based transistors:: stability issues

被引:51
作者
Gomes, HL
Stallinga, P
Dinelli, F
Murgia, M
Biscarini, F
de Leeuw, DM
Muccini, M
Müllen, K
机构
[1] Univ Algarve, Fac Sci & Technol, P-8000 Faro, Portugal
[2] CNR, Ist Studio mat Nanostrutturati, I-40129 Bologna, Italy
[3] Phillips Res, NL-5656 AA Eindhoven, Netherlands
[4] Max Planck Inst Polymer Res, D-55128 Mainz, Germany
关键词
organic transistor; stabilization; electrical properties; amorphous; silicones;
D O I
10.1002/pat.558
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
An investigation into the stability of metal insulator semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow a stretched-hyperbola type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T approximate to 220 K and the other at T approximate to 300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and alpha-sexithiophene deposition parameters. Copyright (c) 2005 John Wiley A Sons, Ltd.
引用
收藏
页码:227 / 231
页数:5
相关论文
共 21 条
[11]   Switch-on voltage in disordered organic field-effect transistors [J].
Meijer, EJ ;
Tanase, C ;
Blom, PWM ;
van Veenendaal, E ;
Huisman, BH ;
de Leeuw, DM ;
Klapwijk, TM .
APPLIED PHYSICS LETTERS, 2002, 80 (20) :3838-3840
[12]  
MUCK T, 2003, MRS S P, V771
[13]   Light-induced bias stress reversal in polyfluorene thin-film transistors [J].
Salleo, A ;
Street, RA .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) :471-479
[14]   On the stability of organic field-effect transistor materials [J].
Schön, JH .
APPLIED PHYSICS LETTERS, 2001, 79 (25) :4163-4164
[15]   Charge trapping instabilities of sexithiophene Thin Film Transistors [J].
Schoonveld, WA ;
Oostinga, JB ;
Vrijmoeth, J ;
Klapwijk, TM .
SYNTHETIC METALS, 1999, 101 (1-3) :608-609
[16]   Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD [J].
Stannowski, B ;
Schropp, REI ;
Wehrspohn, RB ;
Powell, MJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 :1340-1344
[17]   Bipolaron mechanism for bias-stress effects in polymer transistors [J].
Street, RA ;
Salleo, A ;
Chabinyc, ML .
PHYSICAL REVIEW B, 2003, 68 (08)
[18]   Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors [J].
Wehrspohn, RB ;
Deane, SC ;
French, ID ;
Gale, I ;
Hewett, J ;
Powell, MJ ;
Robertson, J .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :144-154
[19]   Urbach energy dependence of the stability in amorphous silicon thin-film transistors [J].
Wehrspohn, RB ;
Deane, SC ;
French, ID ;
Gale, IG ;
Powell, MJ ;
Brüggemann, R .
APPLIED PHYSICS LETTERS, 1999, 74 (22) :3374-3376
[20]   Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation model [J].
Wehrspohn, RB ;
Deane, SC ;
French, ID ;
Powell, MJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :459-463