Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors

被引:129
作者
Wehrspohn, RB [1 ]
Deane, SC
French, ID
Gale, I
Hewett, J
Powell, MJ
Robertson, J
机构
[1] Philips Res Labs, Redhill RH1 5HA, Surrey, England
[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
基金
美国国家科学基金会; 美国国家卫生研究院;
关键词
D O I
10.1063/1.371836
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the mechanism for Si dangling bond defect creation in amorphous silicon thin film transistors as a result of bias stress. We show that the rate of defect creation does not depend on the total hydrogen content or the type of hydrogen bonding in the amorphous silicon. However, the rate of defect creation does show a clear correlation with the Urbach energy and the intrinsic stress in the film. These important results support a localized model for defect creation, i.e., where a Si-Si bond breaks and a nearby H atom switches to stabilize the broken bond, as opposed to models involving the long-range diffusion of hydrogen. Our experimental results demonstrate the importance of optimizing the intrinsic stress in the films to obtain maximum stability and mobility. An important implication is that a deposition process where intrinsic stress can be independently controlled, such as an ion-energy controlled deposition should be beneficial, particularly for deposition temperatures below 300 degrees C. (C) 2000 American Institute of Physics. [S0021-8979(00)10001-5].
引用
收藏
页码:144 / 154
页数:11
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