Determination of the W8 and AB5 defect levels in the diamond gap

被引：10

作者：

Pereira, RN ^{[1
]}

Gehlhoff, W

Sobolev, NA

Neves, AJ

Bimberg, D

机构：

[1] Univ Aveiro, Dept Phys, P-3810193 Aveiro, Portugal

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2001年 / 13卷 / 40期

关键词：

D O I：

10.1088/0953-8984/13/40/311

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron paramagnetic resonance (EPR) and photo-EPR investigations on synthetic diamond crystals have allowed an unambiguous determination of nickel-related defect levels in the diamond bandgap. Indirect photoinduced recharging of the nitrogen donor and detection of two complementary photoionization transitions involving the substitutional nickel show that the Ni-s(-/10) acceptor state is located at 2.49 +/-0.03 eV below the conduction band. A strong decrease of the AB5 EPR signal intensity is induced by irradiation of the samples with photon energies hv > 1.88 eV. Observation of a recharging process upon photoexcitation with hv > 2.5 eV yields the localization of the AB5 defect level position at E = E-C - 1.88 +/-0.03 eV.

引用

收藏

页码：8957 / 8964

页数：8

相关论文

共 13 条

[1] ON THE APPLICATION OF THE PHOTO-EPR TECHNIQUE TO THE STUDIES OF PHOTOIONIZATION, DAP RECOMBINATION, AND NON-RADIATIVE RECOMBINATION PROCESSES [J].

GODLEWSKI, M .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1985, 90 (01) :11-52

[2] ACCEPTOR LEVEL OF SUBSTITUTIONAL NI IN DIAMOND [J].

HOFMANN, DM ;

LUDWIG, M ;

CHRISTMANN, P ;

VOLM, D ;

MEYER, BK ;

PEREIRA, L ;

SANTOS, L ;

PEREIRA, E .

PHYSICAL REVIEW B, 1994, 50 (23) :17618-17620

[3] EPR STUDIES OF INTERSTITIAL NI CENTERS IN SYNTHETIC DIAMOND CRYSTALS [J].

ISOYA, J ;

KANDA, H ;

UCHIDA, Y .

PHYSICAL REVIEW B, 1990, 42 (16) :9843-9852

[4] FOURIER-TRANSFORM AND CONTINUOUS-WAVE EPR STUDIES OF NICKEL IN SYNTHETIC DIAMOND - SITE AND SPIN MULTIPLICITY [J].

ISOYA, J ;

KANDA, H ;

NORRIS, JR ;

TANG, J ;

BOWMAN, MK .

PHYSICAL REVIEW B, 1990, 41 (07) :3905-3913

[5] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].

Lucovsky, G. .

SOLID STATE COMMUNICATIONS, 1965, 3 (09) :299-302

[6] EPR study of the transformations in nickel containing centres at heated synthetic diamonds [J].

Nadolinny, VA ;

Yelisseyev, AP ;

Yuryeva, OP ;

Feygelson, BN .

APPLIED MAGNETIC RESONANCE, 1997, 12 (04) :543-554

[7] New paramagnetic defects in synthetic diamonds grown using nickel catalyst [J].

Neves, AJ ;

Pereira, R ;

Sobolev, NA ;

Nazaré, MH ;

Gehlhoff, W ;

Näser, A ;

Kanda, H .

PHYSICA B-CONDENSED MATTER, 1999, 273-4 :651-654

[8] New paramagnetic centers in annealed high-pressure synthetic diamond [J].

Neves, AJ ;

Pereira, R ;

Sobolev, NA ;

Nazaré, MH ;

Gehlhoff, W ;

Näser, A ;

Kanda, H .

DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) :1057-1060

[9] Electron paramagnetic resonance investigations of nickel defects in natural diamonds [J].

Noble, CJ ;

Pawlik, T ;

Spaeth, JM .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (50) :11781-11793

[10] Optically detected electron paramagnetic resonance of Ni-related defects in synthetic diamond crystals [J].

Pawlik, T ;

Noble, C ;

Spaeth, JM .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (43) :9833-9840