Enhancement of non-geminate electron-hole pair recombination induced by strong electric field in hydrogenated amorphous silicon (a-Si:H):: effective-temperature concept

被引：4

作者：

Aoki, T. ^{[1
]}

Ohrui, N. ^{[1
]}

Fujihashi, C. ^{[1
]}

Shimakawa, K. ^{[2
]}

机构：

[1] Tokyo Polytech Univ, Grad Sch Elect Engn, Joint Res Ctr Hightechnol, Atsugi, Kanagawa 2430297, Japan

[2] Gifu Univ, Dept Elect & Elect Engn, Gifu 5011193, Japan

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2008年 / 88卷 / 01期

关键词：

D O I：

10.1080/09500830701666188

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experimental evidence for field-induced enhancement of non-geminate, i.e. distant-pair (DP), recombination and shortening of the DP lifetime, tau D, by almost two orders of magnitude, is given for undoped hydrogenated amorphous silicon (a-Si:H) subjected to a strong electric Field, F, up to 100kVcm(-1) at a temperature T= 3.7 K. The interplay between the T- and F-dependences of the lifetime tau D is interpreted on the basis of the effective-temperature theory developed for the high-field hopping transport of charge carriers in disordered materials at low T. The results indicate that the DP recombination event is closely connected to transport phenomena in a-Si:H.

引用

页码：9 / 17

页数：9

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