Enhanced radiative emission rate and quantum efficiency in coupled silicon nanocrystal-nanostructured gold emitters

被引:215
作者
Biteen, JS [1 ]
Pacifici, D [1 ]
Lewis, NS [1 ]
Atwater, HA [1 ]
机构
[1] CALTECH, Pasadena, CA 91125 USA
关键词
D O I
10.1021/nl051207z
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report local-field-enhanced light emission from silicon nanocrystals close to a film of nanoporous gold. We resolve photoluminescence as the gold-Si nanocrystal separation distance is varied between 0 and 20 nm and observe a fourfold luminescence intensity enhancement concomitant with increases in the coupled silicon nanocrystal/nanoporous gold absorbance cross section and radiative decay rate. A detailed analysis of the luminescence data indicated a local-field-enhanced quantum efficiency of 58% for the Si nanocrystals coupled to the nanoporous gold layer.
引用
收藏
页码:1768 / 1773
页数:6
相关论文
共 30 条
[1]  
Bohren C., 1983, ABSORPTION SCATTERIN
[2]   Depth distribution of luminescent Si nanocrystals in Si implanted SiO2 films on Si [J].
Brongersma, ML ;
Polman, A ;
Min, KS ;
Atwater, HA .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :759-763
[3]   ELECTRONIC SPECTROSCOPY AND PHOTOPHYSICS OF SI NANOCRYSTALS - RELATIONSHIP TO BULK C-SI AND POROUS SI [J].
BRUS, LE ;
SZAJOWSKI, PF ;
WILSON, WL ;
HARRIS, TD ;
SCHUPPLER, S ;
CITRIN, PH .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1995, 117 (10) :2915-2922
[4]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[5]   VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].
CULLIS, AG ;
CANHAM, LT .
NATURE, 1991, 353 (6342) :335-338
[6]   THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON [J].
DELERUE, C ;
ALLAN, G ;
LANNOO, M .
PHYSICAL REVIEW B, 1993, 48 (15) :11024-11036
[7]   QUANTUM CONFINEMENT IN SI NANOCRYSTALS [J].
DELLEY, B ;
STEIGMEIER, EF .
PHYSICAL REVIEW B, 1993, 47 (03) :1397-1400
[8]   Nanoporous metals with controlled multimodal pore size distribution [J].
Ding, Y ;
Erlebacher, J .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (26) :7772-7773
[9]   Continuously tunable photoluminescence from Si+-implanted and thermally annealed SiO2 films [J].
Fischer, T ;
PetrovaKoch, V ;
Shcheglov, K ;
Brandt, MS ;
Koch, F .
THIN SOLID FILMS, 1996, 276 (1-2) :100-103
[10]   Mechanism and performance of forward and reverse bias electroluminescence at 1.54 mu m from Er-doped Si diodes [J].
Franzo, G ;
Coffa, S ;
Priolo, F ;
Spinella, C .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2784-2793