High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes

被引：132

作者：

Na, Jong H. ^{[1
]}

Kitamura, M.

Arakawa, Y.

机构：

[1] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 1538904, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 06期

关键词：

D O I：

10.1063/1.2969780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the device characteristics of amorphous indium gallium zinc oxide thin-film transistors (TFTs) with aluminum (Al) electrodes. The TFTs exhibited a high performance with a field-effect mobility of 11.39 cm(2)/V s, a subthreshold swing of 181 mV/ decade, and an on-off ratio of 10(7). Further improvement in device performance was achieved by doping the source/drain contact regions, resulting in an enhanced mobility of 16.6 cm(2)/V s at an operating voltage as low as 5 V. (C) 2008 American Institute of Physics.

引用

页数：3

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