Understanding growth of carbon nanowalls at atmospheric pressure using normal glow discharge plasma-enhanced chemical vapor deposition

被引：123

作者：

Bo, Zheng ^{[1
]}

Yu, Kehan ^{[1
]}

Lu, Ganhua ^{[1
]}

Wang, Pengxiang ^{[1
]}

Mao, Shun ^{[1
]}

Chen, Junhong ^{[1
,2
,3
]}

机构：

[1] Univ Wisconsin, Dept Mech Engn, Milwaukee, WI 53211 USA

[2] Tongji Univ, State Key Lab Pollut Control & Resource Reuse, Coll Environm Sci & Engn, Shanghai 200092, Peoples R China

[3] Tongji Univ, Inst Adv Mat & Nano Biomed, Shanghai 200092, Peoples R China

来源：

CARBON | 2011年 / 49卷 / 06期

基金：

美国国家科学基金会;

关键词：

GRAPHITE; NANOTUBES;

D O I：

10.1016/j.carbon.2011.01.007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Synthesis of carbon nanowalls (CNWs) at atmospheric pressure is realized by using a negative normal glow discharge, which differs from prior low-pressure plasma-enhanced chemical vapor deposition methods for CNW growth and holds great potential for mass-production of CNWs. The glow discharge is characterized for electrical and optical properties. The resulting CNW structures are analyzed using transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. The CNW growth process is examined for effects of discharge regime, discharge duration (growth time), hydroxyl radicals (water vapor), and local current density. Possible CNW growth mechanism and critical process parameters to the CNW growth and evolution are identified. OH radicals play an essential role in the initial nucleation process, but excess OH radicals accelerate the oxidation of CNWs. For a fixed growth time, there exists an optimum feed gas relative humidity and an optimum current density (similar to 40% and similar to 9.17 A/m(2), respectively, in the current work) for the growth of large and less defective CNWs with a high degree of crystallinity. Results obtained in this study can be used to tailor final properties of the as-grown CNWs for various applications. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1849 / 1858

页数：10

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