Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure

被引：8

作者：

Okandan, M ^{[1
]}

Fonash, SJ ^{[1
]}

Awadelkarim, OO ^{[1
]}

Chan, YD ^{[1
]}

Preuninger, F ^{[1
]}

机构：

[1] SEMATECH,AUSTIN,TX 78741

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 08期

关键词：

GATE;

D O I：

10.1109/55.511584

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gate leakage current densities on the order of nA/mu m(2) at operating voltage levels have been observed in MOSFET's that were processed in a high-density plasma (HDP) oxide etch tool, yet these transistors have performance parameters that are within 10% of controls. These high ate leakage currents seen in the HDP etched devices were not observed in controls. Direct observation shows that these HDP exposed devices have light emission at higher voltages in the region where the gate poly-Si crosses the birds beak, Light emission in this region is also not observed in controls.

引用

页码：388 / 390

页数：3

共 5 条

[1]

CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[2]

FONASH S, 1994, SOLID STATE TECHNOL, V99

[3] DEGRADATION OF SUBMICRON N-CHANNEL MOSFET HOT-ELECTRON RELIABILITY DUE TO EDGE DAMAGE FROM POLYSILICON GATE PLASMA-ETCHING [J].