Identification of the native vacancy defects in both sublattices of ZnSxSe1-x by positron annihilation

被引：48

作者：

Saarinen, K ^{[1
]}

Laine, T ^{[1
]}

Skog, K ^{[1
]}

Makinen, J ^{[1
]}

Hautojarvi, P ^{[1
]}

Rakennus, K ^{[1
]}

Uusimaa, P ^{[1
]}

Salokatve, A ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] TAMPERE UNIV TECHNOL, DEPT PHYS, TAMPERE 33101, FINLAND

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.77.3407

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show how positron annihilation can distinguish vacancies in the different sublattices of a binary compound by performing experiments in ZnS(x)Se(1-x)layers. We identify the Se vacancies (V-Se) in N-doped and the Zn vacancies (V-zn) in Cl-doped material by the shape of the core electron momentum distribution. The charge of the defect involving V-Se is neutral or negative in p-type ZnSxSe1-x, suggesting that Vs, is complexed with an acceptor. The concentration of the Vs, complexes is high (greater than or equal to 10(18) cm(-3)), indicating that their role is important in the electrical compensation, of p-type ZnSxSe1-x.

引用

页码：3407 / 3410

页数：4

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