Advances in application potential of adsorptive-type solid state gas sensors: high-temperature semiconducting oxides and ambient temperature GasFET devices

被引:62
作者
Fleischer, Maximilian [1 ]
机构
[1] Siemens AG, Res & Technol, D-81739 Munich, Germany
关键词
gas sensors; gas detection; adsorption; metal oxides; semiconducting sensors; conduction mechanism; gas-sensitive FET; gas-sensing meterials;
D O I
10.1088/0957-0233/19/4/042001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reviews some scientific considerations about the underlying material properties and the detailed functional principle of two important types of solid state gas sensors. This is used to predict the application potential of these sensor technologies. The classical methodology to use resistance readout of heated semiconducting metal oxides is a straightforward approach to get robust sensors that are simple in design. The usage of materials that are operated at higher temperatures opens up the way for improvements; due to a change in the mechanism of electrical conductivity, better reproducibility and stability of the electrical properties can be attained. The high operation temperatures also lead to changes in the surface reactions with the gases that allow for quicker equilibration times. The next step is taken when devices are used that are based on the readout of the work function of the sensing materials. Suspended gate FETs here serve as the transducer structures. Surface properties are directly used here, which facilitates the preparation of sensing materials. The sensors can be used with a wide range of sensing materials, allowing the development of receptor materials that optimally fit the target gases. Functional improvements include enhanced selectivity and detection of a wider range of gases. These devices may work at room temperature with little energy required for running them and additionally allow direct access to the structure of the analyte molecule without thermal decomposition.
引用
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页数:18
相关论文
共 43 条
[1]   Conduction model of metal oxide gas sensors [J].
Barsan, N ;
Weimar, U .
JOURNAL OF ELECTROCERAMICS, 2001, 7 (03) :143-167
[2]   THE IMPACT OF MOSFET-BASED SENSORS [J].
BERGVELD, P .
SENSORS AND ACTUATORS, 1985, 8 (02) :109-127
[3]   PIEZOELECTRIC DRIVEN KELVIN PROBE FOR CONTACT POTENTIAL DIFFERENCE STUDIES [J].
BESOCKE, K ;
BERGER, S .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1976, 47 (07) :840-842
[4]   GALLIUM OXIDE THIN-FILMS - A NEW MATERIAL FOR HIGH-TEMPERATURE OXYGEN SENSORS [J].
FLEISCHER, M ;
MEIXNER, H .
SENSORS AND ACTUATORS B-CHEMICAL, 1991, 4 (3-4) :437-441
[5]   STABILITY OF SEMICONDUCTING GALLIUM OXIDE THIN-FILMS [J].
FLEISCHER, M ;
HANRIEDER, W ;
MEIXNER, H .
THIN SOLID FILMS, 1990, 190 (01) :93-102
[6]   Detection of volatile compounds correlated to human diseases through breath analysis with chemical sensors [J].
Fleischer, M ;
Simon, E ;
Rumpel, E ;
Ulmer, H ;
Harbeck, M ;
Wandel, M ;
Fietzek, C ;
Weimar, U ;
Meixner, H .
SENSORS AND ACTUATORS B-CHEMICAL, 2002, 83 (1-3) :245-249
[7]   IN-SITU HALL MEASUREMENTS AT TEMPERATURES UP TO 1100-DEGREES-C WITH SELECTABLE GAS ATMOSPHERES [J].
FLEISCHER, M ;
MEIXNER, H .
MEASUREMENT SCIENCE AND TECHNOLOGY, 1994, 5 (05) :580-583
[8]  
Fleischer M, 1997, J AM CERAM SOC, V80, P2121, DOI 10.1111/j.1151-2916.1997.tb03096.x
[9]   Low-power gas sensors based on work-function measurement in low-cost hybrid flip-chip technology [J].
Fleischer, M ;
Ostrick, B ;
Pohle, R ;
Simon, E ;
Meixner, H ;
Bilger, C ;
Daeche, F .
SENSORS AND ACTUATORS B-CHEMICAL, 2001, 80 (03) :169-173
[10]   SENSING REDUCING GASES AT HIGH-TEMPERATURES USING LONG-TERM STABLE GA2O3 THIN-FILMS [J].
FLEISCHER, M ;
MEIXNER, H .
SENSORS AND ACTUATORS B-CHEMICAL, 1992, 6 (1-3) :257-261