Effect of the growing process on the electronic properties of MgB2 single crystals

被引：6

作者：

Masui, T ^{[1
]}

Lee, S ^{[1
]}

Tajima, S ^{[1
]}

机构：

[1] ISTEC, Supercond Res Lab, Tokyo 1350062, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2003年 / 392卷

关键词：

MgB2; resistivity; anisotropy;

D O I：

10.1016/S0921-4534(03)01080-3

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By controlling growing process, we have succeeded in making MgB2 single crystals with different electronic properties. In the crystals with smaller c/a, larger residual resistivity ratio, higher T-c, and higher anisotropy in H-c2 are observed. In superconducting state, a difference of anisotropy is attributable to H-c2(parallel toc), suggesting a considerable change beyond the disorder effect due to lattice strain. We discuss possible origins for the changes. (C) 2003 Elsevier B.V. All rights reserved.

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页码：281 / 285

页数：5

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