共 28 条
Air-stable operation of organic field-effect transistors on plastic films using organic/metallic hybrid passivation layers
被引:29
作者:

Sekitani, Tsuyoshi
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h-index: 0
机构:
Univ Tokyo, Sch English, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan Univ Tokyo, Sch English, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan

Someya, Takao
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h-index: 0
机构:
Univ Tokyo, Sch English, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan Univ Tokyo, Sch English, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan
机构:
[1] Univ Tokyo, Sch English, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan
来源:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
|
2007年
/
46卷
/
7A期
关键词:
organic transistors;
pentacene;
passivation layer;
reliability;
polyimide gate dielectric layer;
D O I:
10.1143/JJAP.46.4300
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We investigated the stability of organic field-effect transistors (FETs) under ambient conditions. By employing organic/ metallic hybrid passivation layers, we improved the electric stability of organic FETs in air. Pentacene FETs were fabricated on plastic films and encapsulated in organic/ metallic hybrid passivation layers. These FETs exhibited a high mobility of 0.6 cm(2) V-1 s(-1) and an on/off ratio greater than 10(6). When the devices were stored in air for two months, the change in mobility was less than 2%. When continuous source-drain and gate voltages of -40 V were applied to the FETs for 10 days in air, the change in saturation current was less than 5%. We performed bending and heating tests in air. The FETs retained their functionality after being bent with a bending radius of less than I mm, and exhibited no changes in the performance after being subjected to a number of heat cycles up to 160 degrees C. The organic/ metallic hybrid passivation layer is also effective in reducing air degradation of n-type organic FETs.
引用
收藏
页码:4300 / 4306
页数:7
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