Air-stable operation of organic field-effect transistors on plastic films using organic/metallic hybrid passivation layers

被引:29
作者
Sekitani, Tsuyoshi [1 ]
Someya, Takao [1 ]
机构
[1] Univ Tokyo, Sch English, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 7A期
关键词
organic transistors; pentacene; passivation layer; reliability; polyimide gate dielectric layer;
D O I
10.1143/JJAP.46.4300
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the stability of organic field-effect transistors (FETs) under ambient conditions. By employing organic/ metallic hybrid passivation layers, we improved the electric stability of organic FETs in air. Pentacene FETs were fabricated on plastic films and encapsulated in organic/ metallic hybrid passivation layers. These FETs exhibited a high mobility of 0.6 cm(2) V-1 s(-1) and an on/off ratio greater than 10(6). When the devices were stored in air for two months, the change in mobility was less than 2%. When continuous source-drain and gate voltages of -40 V were applied to the FETs for 10 days in air, the change in saturation current was less than 5%. We performed bending and heating tests in air. The FETs retained their functionality after being bent with a bending radius of less than I mm, and exhibited no changes in the performance after being subjected to a number of heat cycles up to 160 degrees C. The organic/ metallic hybrid passivation layer is also effective in reducing air degradation of n-type organic FETs.
引用
收藏
页码:4300 / 4306
页数:7
相关论文
共 28 条
[1]   New air-stable n-channel organic thin film transistors [J].
Bao, ZA ;
Lovinger, AJ ;
Brown, J .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (01) :207-208
[2]   Pentacene-based radio-frequency identification circuitry [J].
Baude, PF ;
Ender, DA ;
Haase, MA ;
Kelley, TW ;
Muyres, DV ;
Theiss, SD .
APPLIED PHYSICS LETTERS, 2003, 82 (22) :3964-3966
[3]   Stability of n-type doped conducting polymers and consequences for polymeric microelectronic devices [J].
deLeeuw, DM ;
Simenon, MMJ ;
Brown, AR ;
Einerhand, REF .
SYNTHETIC METALS, 1997, 87 (01) :53-59
[4]   Electrical characterization of organic based transistors:: stability issues [J].
Gomes, HL ;
Stallinga, P ;
Dinelli, F ;
Murgia, M ;
Biscarini, F ;
de Leeuw, DM ;
Muccini, M ;
Müllen, K .
POLYMERS FOR ADVANCED TECHNOLOGIES, 2005, 16 (2-3) :227-231
[5]   Lifetime of organic thin-film transistors with organic passivation layers - art. no. 073519 [J].
Han, SH ;
Kim, JH ;
Jang, J ;
Cho, SM ;
Oh, MH ;
Lee, SH ;
Choo, DJ .
APPLIED PHYSICS LETTERS, 2006, 88 (07)
[6]   Influence of moisture on device characteristics of polythiophene-based field-effect transistors [J].
Hoshino, S ;
Yoshida, M ;
Uemura, S ;
Kodzasa, T ;
Takada, N ;
Kamata, T ;
Yase, K .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) :5088-5093
[7]   Moisture induced surface polarization in a poly(4-vinyl phenol) dielectric in an organic thin-film transistor [J].
Jung, T ;
Dodabalapur, A ;
Wenz, R ;
Mohapatra, S .
APPLIED PHYSICS LETTERS, 2005, 87 (18) :1-3
[8]   High mobility of pentacene field-effect transistors with polyimide gate dielectric layers [J].
Kato, Y ;
Iba, S ;
Teramoto, R ;
Sekitani, T ;
Someya, T ;
Kawaguchi, H ;
Sakurai, T .
APPLIED PHYSICS LETTERS, 2004, 84 (19) :3789-3791
[9]   A soluble and air-stable organic semiconductor with high electron mobility [J].
Katz, HE ;
Lovinger, AJ ;
Johnson, J ;
Kloc, C ;
Siegrist, T ;
Li, W ;
Lin, YY ;
Dodabalapur, A .
NATURE, 2000, 404 (6777) :478-481
[10]   Pentacene organic thin-film transistors for circuit and display applications [J].
Klauk, H ;
Gundlach, DJ ;
Nichols, JA ;
Jackson, TN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (06) :1258-1263