Air-stable operation of organic field-effect transistors on plastic films using organic/metallic hybrid passivation layers

被引：29

作者：

Sekitani, Tsuyoshi ^{[1
]}

Someya, Takao ^{[1
]}

机构：

[1] Univ Tokyo, Sch English, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 7A期

关键词：

organic transistors; pentacene; passivation layer; reliability; polyimide gate dielectric layer;

D O I：

10.1143/JJAP.46.4300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the stability of organic field-effect transistors (FETs) under ambient conditions. By employing organic/ metallic hybrid passivation layers, we improved the electric stability of organic FETs in air. Pentacene FETs were fabricated on plastic films and encapsulated in organic/ metallic hybrid passivation layers. These FETs exhibited a high mobility of 0.6 cm(2) V-1 s(-1) and an on/off ratio greater than 10(6). When the devices were stored in air for two months, the change in mobility was less than 2%. When continuous source-drain and gate voltages of -40 V were applied to the FETs for 10 days in air, the change in saturation current was less than 5%. We performed bending and heating tests in air. The FETs retained their functionality after being bent with a bending radius of less than I mm, and exhibited no changes in the performance after being subjected to a number of heat cycles up to 160 degrees C. The organic/ metallic hybrid passivation layer is also effective in reducing air degradation of n-type organic FETs.

引用

页码：4300 / 4306

页数：7

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