Wideband semiconductor optical amplifier steady-state numerical model

被引:279
作者
Connelly, MJ [1 ]
机构
[1] Univ Limerick, Dept Elect & Comp Engn, Limerick, Ireland
关键词
modeling; semiconductor optical amplifier;
D O I
10.1109/3.910455
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A wideband steady-state model and efficient numerical algorithm for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes, The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.
引用
收藏
页码:439 / 447
页数:9
相关论文
共 18 条
[1]  
ADACHI S, 1992, PHYSICAL PROPERTIES
[2]   CURRENT CONFINEMENT AND LEAKAGE CURRENTS IN PLANAR BURIED-RIDGE-STRUCTURE LASER-DIODES ON N-SUBSTRATE [J].
AMANN, MC ;
THULKE, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (07) :1595-1602
[3]   CARRIER-INDUCED CHANGE IN REFRACTIVE-INDEX OF INP, GAAS, AND INGAASP [J].
BENNETT, BR ;
SOREF, RA ;
DELALAMO, JA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (01) :113-122
[4]   ANALYTICAL MODEL OF A SEMICONDUCTOR OPTICAL AMPLIFIER [J].
BROSSON, P .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1994, 12 (01) :49-54
[5]  
CHUANG SL, 1995, PHYSICS OPTOELECTRON
[6]   TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER DETECTOR NOISE CHARACTERISTICS [J].
CONNELLY, MJ ;
ODOWD, RF .
IEE PROCEEDINGS-OPTOELECTRONICS, 1995, 142 (01) :23-28
[7]  
Deguet C., 1999, P EUR C OPT COMM
[8]  
Gillner L, 1991, PROC I ELECT ENG J, V139, P339
[9]   MEASUREMENT OF RADIATIVE AND NONRADIATIVE RECOMBINATION RATE IN INGAASP-INP LEDS [J].
KOT, M ;
ZDANSKY, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (08) :1746-1750
[10]   AMPLIFIED SPONTANEOUS EMISSION IN SEMICONDUCTOR-LASER AMPLIFIERS - VALIDITY OF THE TRANSMISSION-LINE LASER MODEL [J].
LOWERY, AJ .
IEE PROCEEDINGS-J OPTOELECTRONICS, 1990, 137 (04) :241-247