MEASUREMENT OF RADIATIVE AND NONRADIATIVE RECOMBINATION RATE IN INGAASP-INP LEDS

被引:11
作者
KOT, M
ZDANSKY, K
机构
[1] Institute of Radio Engineering and Electronics, Czech Academy of Sciences, Prague 8
关键词
D O I
10.1109/3.142567
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The curves of the minority carrier lifetime versus current are measured in InGaAsP-InP double heterostructure LED's. To analyze the measured data the carrier recombination rate R(tot) versus the minority carrier concentration n are calculated. The following recombination processes are considered to explain the measured data: radiative, Auger, on heterointerfaces and/or on recombination centres. The radiative recombination rate R(rad) versus n curves are confirmed to be parabolic. A simple analytical formula for the radiative recombination rate coefficient B(n) is derived.
引用
收藏
页码:1746 / 1750
页数:5
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