MEASUREMENT OF RADIATIVE AND NONRADIATIVE RECOMBINATION RATE IN INGAASP-INP LEDS

被引：11

作者：

KOT, M

ZDANSKY, K

机构：

[1] Institute of Radio Engineering and Electronics, Czech Academy of Sciences, Prague 8

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 08期

关键词：

D O I：

10.1109/3.142567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The curves of the minority carrier lifetime versus current are measured in InGaAsP-InP double heterostructure LED's. To analyze the measured data the carrier recombination rate R(tot) versus the minority carrier concentration n are calculated. The following recombination processes are considered to explain the measured data: radiative, Auger, on heterointerfaces and/or on recombination centres. The radiative recombination rate R(rad) versus n curves are confirmed to be parabolic. A simple analytical formula for the radiative recombination rate coefficient B(n) is derived.

引用

页码：1746 / 1750

页数：5

共 10 条

[1]

CHILK KD, 1988, J APPL PHYS, V64, P2138

[2]

ETTENBERG M, 1979, J APPL PHYS, V18, P2949

[3] RADIANCE SATURATION IN SMALL-AREA GALNASP-LNP AND GAALAS-GAAS LEDS [J].