Pattern level assembly of Ge quantum dots on Si with focused ion beam templating

被引：18

作者：

Gherasimova, M. ^{[1
]}

Hull, R. ^{[1
,2
]}

Reuter, M. C. ^{[3
]}

Ross, F. M. ^{[3
]}

机构：

[1] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA

[2] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA

[3] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2957676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Array level assembly mechanisms are described for controlled nucleation of Ge quantum dots (QDs) on Si(100) surfaces templated by low dose focused ion beam pulses. The registration rates of QD positions with the target sites approach 100% for site separations of 100 nm and above, but incomplete occupancy is observed at closer distances. We investigate the dependence of the QD array perfection on the site separation, and identify the competition between the intended nucleation sites for the supply of Ge adatoms as a key factor limiting the large area registration fidelity. (C) 2008 American Institute of Physics.

引用

页数：3

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