Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography

被引:10
作者
Kubis, Alan J. [1 ]
Vandervelde, Thomas E.
Bean, John C.
Dunn, Derren N.
Hull, Robert
机构
[1] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
[2] Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA
[3] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[4] IBM Microelect, Hopewell Jct, NY 12533 USA
基金
美国国家科学基金会;
关键词
GROWTH;
D O I
10.1063/1.2217930
中图分类号
O59 [应用物理学];
学科分类号
摘要
Buried layers in quantum dot (QD) superlattices influence the position of QDs in the subsequently grown layers through strain field interactions. Since the strain interactions are complex, a three-dimensional reconstruction of the superlattice can enhance the fundamental understanding of self-organization mechanisms. We have studied the three-dimensional relationship of QDs using focused ion beam tomography. Analysis of the reconstruction is consistent with earlier models for self-organization. QDs on successive layers form above buried QDs. In certain cases, successive QDs in a column decrease in size, resulting in the elimination of the column while QDs in other columns grow in size. (c) 2006 American Institute of Physics.
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页数:3
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