On the atomistic and kinetic nature of strained epitaxy and formation of coherent 3D island quantum boxes

被引：14

作者：

Madhukar, A ^{[1
]}

Ramachandran, TR ^{[1
]}

Konkar, A ^{[1
]}

Mukhametzhanov, I ^{[1
]}

Yu, W ^{[1
]}

Chen, P ^{[1
]}

机构：

[1] Univ So Calif, Dept Mat Sci & Engn, Los Angeles, CA 90089 USA

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

D O I：

10.1016/S0169-4332(97)00464-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Some remarkable recent results of the in situ scanning tunneling microscope (STM) and atomic force microscope (AFM) studies of InAs coherent 3D island initiation and evolution on GaAs(001) are presented in the larger context of the field of strained epitaxy. The role of nano and meso scale mesas in manipulating stress/strain is illustrated through examples of growths on in sim, purely growth control prepared stripe and square mesas with linear dimensions as small as similar to 40 nm. A set of basic kinetic processes and their strain dependence is identified and suggested to form a good core that has the potential for providing a unified framework for understanding strained epitaxy ranging from low misfits to high misfits. (C) 1998 Elsevier Science B.V.

引用

页码：266 / 275

页数：10

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