Comparison of exciton properties in quantum well structures of ZnCdSe/ZnSe and ZnSe/ZnMgSSe

被引:4
作者
Godlewski, M
Ivanov, VY
Bergman, JP
Monemar, B
Leonardi, K
Behringer, M
Hommel, D
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[3] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany
关键词
D O I
10.12693/APhysPolA.94.313
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Properties of excitons in quantum well structures of ZnCdSe/ZnSe and ZnSe/ZnMgSSe are compared. In ternary ZnCdSe quantum wells and at low temperature excitons are strongly localised. Weaker localization is observed in quantum well structures of ZnSe/ZnMgSSe. Present studies suggest formation of negatively charged excitons in the latter structures.
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收藏
页码:313 / 316
页数:4
相关论文
共 4 条
[1]   Influence of strain conditions on exciton dynamics and on thermal stability of photoluminescence of ZnCdSe/ZnSe quantum wells [J].
Godlewski, M ;
Bergman, JP ;
Monemar, B ;
Kurtz, E ;
Hommel, D .
APPLIED PHYSICS LETTERS, 1996, 69 (19) :2843-2845
[2]   OBSERVATION OF NEGATIVELY CHARGED EXCITONS X- IN SEMICONDUCTOR QUANTUM-WELLS [J].
KHENG, K ;
COX, RT ;
DAUBIGNE, YM ;
BASSANI, F ;
SAMINADAYAR, K ;
TATARENKO, S .
PHYSICAL REVIEW LETTERS, 1993, 71 (11) :1752-1755
[3]   MOBILE AND IMMOBILE EFFECTIVE-MASS-PARTICLE COMPLEXES IN NONMETALLIC SOLIDS [J].
LAMPERT, MA .
PHYSICAL REVIEW LETTERS, 1958, 1 (12) :450-453
[4]   100 h II-VI blue-green laser diode [J].
Taniguchi, S ;
Hino, T ;
Itoh, S ;
Nakano, K ;
Nakayama, N ;
Ishibashi, A ;
Ikeda, M .
ELECTRONICS LETTERS, 1996, 32 (06) :552-553