Characterization of W films on Si and SiO2/Si substrates by X-ray diffraction, AFM and blister test adhesion measurements

被引:17
作者
Bosseboeuf, A
Dupeux, M
Boutry, M
Bourouina, T
Bouchier, D
Debarre, D
机构
[1] Univ Paris Sud, Ctr Orsay, Inst Elect Fondamentale, CNRS,URA 0022, F-91405 Orsay, France
[2] Ecole Natl Super Electrochim & Electrome Grenoble, Inst Natl Polytech Grenoble,UJFG, Lab Thermodynam & Physicochim Met, CNRS,UMR 5614, F-38402 St Martin Dheres, France
来源
MICROSCOPY MICROANALYSIS MICROSTRUCTURES | 1997年 / 8卷 / 4-5期
关键词
D O I
10.1051/mmm:0199700804-5026100
中图分类号
TH742 [显微镜];
学科分类号
摘要
Contrary to most classical adhesion test, the blister test provides quantitative adhesion energy measurements. We demonstrate its application to 1 mu m thick W films in tensile stress state deposited by xenon DC magnetron sputtering on PECVn/Si(100) substrates. The W films surface morphology; structure and residual stress were also characterized by atomic force microscopy, X-ray diffraction and substrate curvature measurements as function of the deposition pressure. Films characteristics are compared with those of W films deposited directly on Si(100) substrates.
引用
收藏
页码:261 / 272
页数:12
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