Combined in situ and ex situ analysis of hydrogen radical and thermal removal of native oxides from (001) GaAs

被引:10
作者
Eyink, KG [1 ]
Grazulis, L [1 ]
机构
[1] USAF, Res Lab, AFRL MLPS, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 02期
关键词
D O I
10.1116/1.1884122
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We are currently involved in the study of regrowth of InAs on nanopatterned GaAs surfaces. The nanopatterning is accomplished through the movement of the sample while in contact with a diamond tip maintained at a constant load. Native oxides present on these surfaces introduce an obstacle to the subsequent regrowth. Therefore, the removal of this oxide is a prerequisite step for the, study of the subsequent regrowth on these patterned surfaces. In this study we used in situ spectroscopic ellipsometry (SE) and reflection high energy electron diffraction (RHEED) as well as ex situ atomic force microscopy to follow the hydrogen cleaning and thermal removal of the native oxides from the GaAs surface. SE and RHEED were used to follow the oxide desorption process in situ and were used to determine when the surface was clean. Post AFM analysis indicated that the thermally desorbed oxide surface contained pits which were approximately 100 angstrom deep and covered 15% of the surface. Hydrogen radical cleaning was studied at substrate temperatures between 400-535 degrees C using a pressure of approximately 1 X 10(-6) Torr'and a cracking thermocouple reading of 900 degrees C. The time to produce a clean surface was found to decrease as the temperature was increased. At the highest temperatures, cleaning took less than 10 min. AFM analysis indicated smooth surfaces were produced up.to 500 degrees C. Above 500 degrees C, pitting was seen to occur similaf to that observed for thermal oxide desorption. It was found that the onset of this pitting coincided with time at which spectroscopic ellipsometry indicated a change in the oxide layer. (c) 2005 American Vacuum Society.
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页码:554 / 558
页数:5
相关论文
共 14 条
[1]   Characterization of oxide layers on GaAs substrates [J].
Allwood, DA ;
Carline, RT ;
Mason, NJ ;
Pickering, C ;
Tanner, BK ;
Walker, PJ .
THIN SOLID FILMS, 2000, 364 (1-2) :33-39
[2]   APPLICATION OF ELLIPSOMETRY TO CRYSTAL-GROWTH BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY [J].
ASPNES, DE ;
QUINN, WE ;
GREGORY, S .
APPLIED PHYSICS LETTERS, 1990, 56 (25) :2569-2571
[3]  
*EPI, 1994, US AT HYDR MBE
[4]   Micro-Raman study of the damage in nanopatterned GaAs(001) [J].
Eyink, KG ;
Grazulis, L ;
Reber, JC ;
Busbee, JD .
JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (10) :1112-1116
[5]   Mechanical lithography using a single point diamond machining [J].
Goss, SH ;
Grazulis, L ;
Tomich, DH ;
Eyink, KG ;
Walck, SD ;
Haas, TW ;
Thomas, DR ;
Lampert, WV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1439-1445
[6]   Comparison of nanomachined III-V semiconductor substrates [J].
Grazulis, L ;
Kelly, DL ;
Walker, DE ;
Tomich, DH ;
Eyink, KG ;
Lampert, WV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04) :1852-1855
[7]   GaAs surface oxide desorption by annealing in ultra high vacuum [J].
Guillén-Cervantes, A ;
Rivera-Alvarez, Z ;
López-López, M ;
López-Luna, E ;
Hernández-Calderón, I .
THIN SOLID FILMS, 2000, 373 (1-2) :159-163
[8]   INSITU SPECTROSCOPIC ELLIPSOMETRY IN MOLECULAR-BEAM EPITAXY [J].
MARACAS, GN ;
EDWARDS, JL ;
SHIRALAGI, K ;
CHOI, KY ;
DROOPAD, R ;
JOHS, B ;
WOOLAM, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :1832-1839
[9]   VARIATIONS IN SUBSTRATE-TEMPERATURE INDUCED BY MOLECULAR-BEAM EPITAXIAL-GROWTH ON RADIATIVELY HEATED SUBSTRATES [J].
SHANABROOK, BV ;
WATERMAN, JR ;
DAVIS, JL ;
WAGNER, RJ ;
KATZER, DS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :994-997
[10]   LOW-RETARDANCE FUSED-QUARTZ WINDOW FOR REAL-TIME OPTICAL APPLICATIONS IN ULTRAHIGH-VACUUM [J].
STUDNA, AA ;
ASPNES, DE ;
FLOREZ, LT ;
WILKENS, BJ ;
HARBISON, JP ;
RYAN, RE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (06) :3291-3294