Quantum cascade electroluminescence in GaAs/AlGaAs structures

被引：6

作者：

Kruck, P ^{[1
]}

Strasser, G

Helm, M

Hvozdara, L

Gornik, E

机构：

[1] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria

[2] Vienna Tech Univ, Inst Festkorperelekt, A-1040 Vienna, Austria

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

基金：

奥地利科学基金会;

关键词：

electroluminescence; semiconductor quantum wells; unipolar semiconductor laser; light-emitting diode;

D O I：

10.1016/S1386-9477(98)00092-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The operation of a unipolar quantum cascade light-emitting diode based on the material system GaAs/AlGaAs is reported. The LED operates at a wavelength of 6.9 mu m. Detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm(2) the optical output power lies in the ten 10 nW range. Additional absorption and photocurrent measurements provide a complete characterization of the mid-infrared emitter. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：449 / 452

页数：4

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