Compact multiple-valued multiplexers using negative differential resistance devices

被引:40
作者
Chan, HL [1 ]
Mohan, S [1 ]
Mazumder, P [1 ]
Haddad, GI [1 ]
机构
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
关键词
D O I
10.1109/4.508262
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Quantum electronic devices with negative differential resistance (NDR) characteristics have been used to design compact multiplexers. These multiplexers may be used either as analog multiplexers where the signal on a single select line selects one out of four analog inputs, or as four-valued logic multiplexers where the select line and the input fines represent one of four quantized signal values and the output line correspends to the selected input. Any four-valued logic function can be implemented using only four-valued multiplexers (also known as T-gates), and this T-gate uses just 13 devices (transistors) as compared to 44 devices in CMOS. The design of the T-gate was done using a combination of resonant tunneling diodes (RTD's) and heterojunction bipolar transistors (HBT's) with the folded I-V characteristic (NDR characteristic) of the RTD's providing the compact logic implementation and the HBT's providing the gain and isolation. The application of the same design principles to the design of T-gates using other NDR devices such as resonant tunneling hot electron transistors (RHET's) and resonant tunneling bipolar transistors (RTBT's) is also demonstrated.
引用
收藏
页码:1151 / 1156
页数:6
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