Efficiency enhancement of Cu(In,Ga)Se2 solar cells due to post-deposition Na incorporation

被引：267

作者：

Rudmann, D ^{[1
]}

da Cunha, AF

Kaelin, M

Kurdesau, F

Zogg, H

Tiwari, AN

Bilger, G

机构：

[1] ETH, Swiss Fed Inst Technol, Solid State Phys Lab, Thin Film Phys Grp, CH-8005 Zurich, Switzerland

[2] Univ Stuttgart, Inst Phys Elect, D-70569 Stuttgart, Germany

[3] Loughborough Univ Technol, Dept Elect & Elect Engn, Loughborough LE11 3TU, Leics, England

[4] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 07期

关键词：

D O I：

10.1063/1.1646758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu(In,Ga)Se-2 (CIGS) absorber layers for thin-film solar cells were grown without sodium. Na was diffused into some of the absorbers after growth, which led to strongly improved device performance compared with Na-free cells. Efficiencies of 13.3% and 14.4% were achieved at substrate temperatures as low as 400 and 450degreesC, respectively. With the post-deposition treatment, the effects of Na on CIGS growth are excluded, and most of the Na is expected to reside at grain boundaries. The dominating cause for Na-induced device improvements might be passivation of grain boundaries. (C) 2004 American Institute of Physics.

引用

页码：1129 / 1131

页数：3

共 12 条

[1]

[Anonymous], 26 IEEE PHOT SPEC C

[2] Growth of Cu(In,Ga)Se2 thin films by coevaporation using alkaline precursors [J].