Hole levels and exciton states in CdS nanocrystals

被引：41

作者：

Li, JB

Xia, JB

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] China Ctr Adv Sci & Technol, World Lab, Beijing 100080, Peoples R China

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.62.12613

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the hole levels and exciton states in CdS nanocrystals by using the hole effective-mass Hamiltonian for wurtzite structure. It is found that the optically passive P-x state will become the ground hole state for small CdS quantum dots of radius less than 69 Angstrom. It suggests that the "dark exciton" would be more easily observed in the CdS quantum dots than that in CdSe quantum dots. The size dependence of the resonant Stokes shift is predicted for CdS quantum dots. Including the Coulomb interaction, exciton energies as functions of the dot radius are calculated and compared with experimental data.

引用

页码：12613 / 12616

页数：4

共 20 条

[1] ELECTRON ELECTRON AND ELECTRON-HOLE INTERACTIONS IN SMALL SEMICONDUCTOR CRYSTALLITES - THE SIZE DEPENDENCE OF THE LOWEST EXCITED ELECTRONIC STATE [J].