Scaling properties and electromigration resistance of sputtered Ag metallization lines

被引：114

作者：

Hauder, M ^{[1
]}

Gstöttner, J ^{[1
]}

Hansch, W ^{[1
]}

Schmitt-Landsiedel, D ^{[1
]}

机构：

[1] Tech Univ Munich, Inst Tech Elect, D-8000 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 06期

关键词：

D O I：

10.1063/1.1345801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resistivity and electromigration were investigated for thin sputtered Ag films and microstructured Ag lines. Resistivities of thin films were found to be lower compared to copper and follow the prediction of the size effect. Microstructured Ag lines show a high electromigration resistance at accelerated stress measurements. Considering joule heating of the lines, the activation energy for electromigration was found to be 0.58 eV. The extrapolated median lifetime of Ag lines was found to be similar or higher than for Cu lines. (C) 2001 American Institute of Physics.

引用

页码：838 / 840

页数：3

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