The role of Si as surfactant and donor in molecular-beam epitaxy of AlN

被引：42

作者：

Lebedev, V ^{[1
]}

Morales, FM ^{[1
]}

Romanus, H ^{[1
]}

Krischok, S ^{[1
]}

Ecke, G ^{[1
]}

Cimalla, V ^{[1
]}

Himmerlich, M ^{[1
]}

Stauden, T ^{[1
]}

Cengher, D ^{[1
]}

Ambacher, O ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Ctr Micro & Nanotechnol, D-98684 Ilmenau, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 09期

关键词：

D O I：

10.1063/1.2126786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of Si-doped AlN(0001) thin films on Al2O3(0001) substrates by plasma-induced molecular-beam epitaxy is reported. We have found that Si positively affects the epitaxy being an effective surfactant for AlN growth with a remarkable impact on the crystal quality. It was proven that the characteristic surface reconstruction sequences frequently related to the Al adatoms are obviously Si induced on AlN (0001) surfaces. It was also observed that heavy doping conditions result in volume segregation of Si on the threading dislocation network and in the formation of an amorphous (AlO)(SiO)N cap layer caused by surface oxidation of the accumulated Al and segregated Si. The electron affinity was measured to be smaller than 0.5 eV on the clean AlN surface after removing of the cap layer using Ar+ sputtering. (c) 2005 American Institute of Physics.

引用

页数：6

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