Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy -: art. no. 024106

被引：68

作者：

Ive, T ^{[1
]}

Brandt, O ^{[1
]}

Kostial, H ^{[1
]}

Friedland, KJ ^{[1
]}

Däweritz, L ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 02期

关键词：

D O I：

10.1063/1.1850183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the properties of Si-doped AlN films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Whereas nominally undoped AlN films are invariably insulating in nature, Si-doped films are found to be semiconducting with an electron concentration up to 7.4x10(17) cm(-3), and a resistivity approaching 1 Omega cm at room temperature. Even heavy Si-doping (1x10(20) cm(-3)) does not degrade the structural properties of the AlN films. The morphology of these films is characterized by Si-induced step-bunching, but remains smooth with a rms roughness of about 1 nm. (C) 2005 American Institute of Physics.

引用

页码：024106 / 1

页数：3

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