Optical phonons in polar semiconductor nanowires

被引:87
作者
Mahan, GD [1 ]
Gupta, R
Xiong, Q
Adu, CK
Eklund, PC
机构
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
[3] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
来源
PHYSICAL REVIEW B | 2003年 / 68卷 / 07期
关键词
D O I
10.1103/PhysRevB.68.073402
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that the long-range dipolar interactions in a crystalline cubic polar semiconducting nanowire give rise to an important splitting of the Raman-active transverse optic (TO) and longitudinal optic (LO) phonons at the center of the Brillouin zone. The dipole sums that determine the two LO and two TO phonon frequencies in the nanowire are sensitive to the aspect ratio (L/D), where L and D are the length and diameter, respectively. In the limit L/D -->infinity, we predict the phonon frequencies for several important polar semiconducting nanowires. Our calculated results are also compared with Raman scattering data obtained on crystalline GaP and GaAs semiconducting wires.
引用
收藏
页数:4
相关论文
共 31 条
[21]   FREE OPTICAL VIBRATIONS OF AN INFINITE-PLATE OF HOMOGENEOUS ISOTROPIC ELASTIC MATTER [J].
RIDLEY, BK .
PHYSICAL REVIEW B, 1991, 44 (16) :9002-9011
[22]   OPTICAL-PROPERTIES OF FREESTANDING SILICON QUANTUM WIRES [J].
SANDERS, GD ;
CHANG, YC .
APPLIED PHYSICS LETTERS, 1992, 60 (20) :2525-2527
[23]  
Stroscio M.A., 2001, PHONONS NANOSTRUCTUR, DOI DOI 10.1017/CBO9780511534898.004
[24]  
Trallero-Giner C., 1998, LONG WAVE POLAR MODE
[25]   ANALYSIS OF THE PHENOMENOLOGICAL MODELS FOR LONG-WAVELENGTH POLAR OPTICAL MODES IN SEMICONDUCTOR LAYERED SYSTEMS [J].
TRALLEROGINER, C ;
GARCIAMOLINER, F ;
VELASCO, VR ;
CARDONA, M .
PHYSICAL REVIEW B, 1992, 45 (20) :11944-11948
[26]   Quantum confinement in nanoscale silicon: The correlation of size with bandgap and luminescence [J].
von Behren, J ;
van Buuren, T ;
Zacharias, M ;
Chimowitz, EH ;
Fauchet, PM .
SOLID STATE COMMUNICATIONS, 1998, 105 (05) :317-322
[27]   Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects [J].
Wang, RP ;
Zhou, GW ;
Liu, YL ;
Pan, SH ;
Zhang, HZ ;
Yu, DP ;
Zhang, Z .
PHYSICAL REVIEW B, 2000, 61 (24) :16827-16832
[28]  
WILKINSON GR, 1973, RAMAN EFFECT
[29]  
XIONG Q, UNPUB
[30]   Silicon nanowires: Preparation, device fabrication, and transport properties [J].
Yu, JY ;
Chung, SW ;
Heath, JR .
JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (50) :11864-11870