OPTICAL-PROPERTIES OF FREESTANDING SILICON QUANTUM WIRES

被引：60

作者：

SANDERS, GD ^{[1
]}

CHANG, YC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 20期

关键词：

D O I：

10.1063/1.106927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present theoretical studies of the optical properties of free-standing Si quantum wires, using an empirical tight-binding model, which includes d orbitals and second-neighbor interactions. The excitonic effects are included within the effective-mass approximation. The predicted exciton transition energy for a quantum wire with a width of 27 angstrom agrees with the observed luminescence for a sample of similar size. We found that the thermally averaged exciton oscillator strengths for quantum wires with widths around 8 angstrom can become comparable to that of bulk GaAs.

引用

页码：2525 / 2527

页数：3

共 8 条

[1] [Anonymous], ELECTRONIC STRUCTURE
[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
CANHAM, LT
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
[3] THEORY OF DIELECTRIC-FUNCTION ANISOTROPIES OF (001) GAAS (2X1) SURFACES
CHANG, YC
ASPNES, DE
[J]. PHYSICAL REVIEW B, 1990, 41 (17): : 12002 - 12012
[4] KOSHIDA N, 1991, JPN J APPL PHYS, V30, pL1223
[5] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT
LEHMANN, V
GOSELE, U
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (08) : 856 - 858
[6] THOOFT GW, 1987, PHYS REV B, V35, P8281, DOI 10.1103/PhysRevB.35.8281
[7] VOGEL P, 1983, J PHYS CHEM SOLIDS, V44, P365
[8] CALCULATION OF REFLECTIVITY, MODULATED REFLECTIVITY, AND BAND STRUCTURE OF GAAS, GAP, ZNSE, AND ZNS
WALTER, JP
COHEN, ML
[J]. PHYSICAL REVIEW, 1969, 183 (03): : 763 - &

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