Growth of ZnSe nanowires by pulsed-laser deposition

被引：22

作者：

Zhang, Tinwei ^{[1
]}

Shen, Yiqun ^{[1
]}

Hu, Wei ^{[1
]}

Sun, Jian ^{[1
]}

Wu, Jiada ^{[1
]}

Ying, Zhifeng ^{[1
]}

Xu, Ning ^{[1
]}

机构：

[1] Fudan Univ, Dept Opt Sci & Engn, State Key Joint Lab Adv Photon Mat & Dev, Shanghai 200433, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 06期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1116/1.2794052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stoichiometric ZnSe nanowires have been grown by pulsed-laser deposition on GaAs (100) substrates coated with gold layers. The gold layer plays a key role as catalyst in the deposition of ZnSe nanowires. The thickness of the gold film greatly affected the density of the ZnSe nanowires synthesized on the substrate. No ZnSe nanowires were synthesized on the bare GaAs (100) substrate. The microstructures and the chemical compositions of the as-synthesized nanowires were investigated by scanning electron microscopy, x-ray diffraction, and Raman spectroscopy. The results reveal that the as-grown thin films consist of ZnSe nanowires with diameters ranging from 20 to 40 nm, and the nanowires appear to be randomly oriented on the Au-coated substrate. The as-grown nanowires were also observed to be elongated along different crystallographic directions. (C) 2007 American Vacuum Society.

引用

页码：1823 / 1826

页数：4

共 17 条

[1] ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy [J].