High-Quality Single-Layer Graphene via Reparative Reduction of Graphene Oxide

Reduction of graphene oxide (GO) is a promising low-cost synthetic approach to bulk graphene, which offers an accessible route to transparent conducting films and flexible electronics. Unfortunately, the release of oxygen-containing functional groups inevitably leaves behind vacancies and topological defects on the reduced GO sheet, and its low electrical conductivity hinders the development of practical applications. Here, we present a strategy for real-time repair of the newborn vacancies with carbon radicals produced by thermal decomposition of a suitable precursor. The sheet conductivity of thus-obtained single-layer graphene was raised more than six-fold to 350-410 S/cm (whilst retaining > 96% transparency). X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy revealed that the conductivity enhancement can be attributed to the formation of additional sp(2)-C structures. This method provides a simple and efficient process for obtaining highly conductive transparent graphene films.