Ballistic transport in a GaAs/AlxGa1-xAs one-dimensional channel fabricated using an atomic force microscope

被引：19

作者：

Curson, NJ ^{[1
]}

Nemutudi, R ^{[1
]}

Appleyard, NJ ^{[1
]}

Pepper, M ^{[1
]}

Ritchie, DA ^{[1
]}

Jones, GAC ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 22期

关键词：

D O I：

10.1063/1.1374225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricate a one-dimensional constriction in a shallow, delta -doped GaAs/AlxGa1-xAs two-dimensional electron gas, by locally oxidizing the surface using an atomic force microscope. The channel exhibits ballistic conduction with up to seven conductance plateaus, quantized in units of 2e(2)/h. The dependence of the device conductance on dc bias voltage reveals the energy separation of the first two subbands to be DeltaE(1,2)=5.5(+/-0.3) meV, which allows ballistic conduction to be observed up to a temperature of 20 K. A lateral electric field, combined with the hard-walled confinement due to the insulating lines, allows manipulation of the electron wave function in a way which is not possible with surface-gated devices. (C) 2001 American Institute of Physics.

引用

页码：3466 / 3468

页数：3

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