Level-set methods for the simulation of epitaxial phenomena

被引：82

作者：

Gyure, MF

Ratsch, C

Merriman, B

Caflisch, RE

Osher, S

Zinck, JJ

Vvedensky, DD

机构：

[1] Hughes Res Labs, LLC, Malibu, CA 90265 USA

[2] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA

[3] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BZ, England

来源：

PHYSICAL REVIEW E | 1998年 / 58卷 / 06期

关键词：

D O I：

10.1103/PhysRevE.58.R6927

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

We introduce a model for epitaxial phenomena based on the motion of island boundaries, which is described by the level-set method. Our model treats the growing film as a continuum in the lateral direction, but retains atomistic discreteness in the growth direction. An example of such an "island dynamics" model using the level-set method is presented and compared with the corresponding rate equation description. Extensions of our methodology to more general settings are then discussed. [S1063-651X(98)50212-7].

引用

页码：R6927 / R6930

页数：4

共 22 条

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