Studies on the high electronic energy deposition in polyaniline thin films

被引:7
作者
Deshpande, N. G. [1 ]
Gudage, Y. G. [1 ]
Vyas, J. C. [2 ]
Singh, F. [3 ]
Sharma, Ramphal [1 ]
机构
[1] Dr BA Marathwada Univ, Dept Phys, Thin Film & Nanotechnol Lab, Aurangabad 431004, Maharashtra, India
[2] Bhabha Atom Res Ctr, Tech Phys & Prototype Engn Div, Bombay 400085, Maharashtra, India
[3] Inter Univ, Accelerator Ctr, New Delhi 110067, India
关键词
polyaniline; in situ polymerization technique; high electronic energy deposition; physico-chemical changes;
D O I
10.1016/j.nimb.2008.03.087
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We report here the physico-chemical changes brought about by high electronic energy deposition of gold ions in HCl doped polyaniline (PANI) thin films. PANI thin films were synthesized by in situ polymerization technique. The as-synthesized PANI thin films of thickness 160 nm were irradiated using Au7+ ion of 100 MeV energy at different fluences, namely, 5 x 10(11) ions/cm(2) and 5 x 10(1)2 ions/cm(2), respectively. A significant change was seen after irradiation in electrical and photo conductivity, which may be related to increased carrier concentration, and structural modifications in the polymer film. In addition, the high electronic energy deposition showed other effects like cross-linking of polymer chains, bond breaking and creation of defect sites. AFM observations revealed mountainous type features in all (before and after irradiation) PANI samples. The average size (diameter) and density of such mountainous clusters were found to be related with the ion fluence. The AFM profiles also showed change in the surface roughness of the films with respect to irradiation, which is one of the peculiarity of the high electronic energy deposition technique. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:2002 / 2008
页数:7
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