Surface and line-edge roughness in solution and plasma developed negative tone resists: Experiment and simulation

被引：22

作者：

Patsis, GP ^{[1
]}

Tserepi, A

Raptis, I

Glezos, N

Gogolides, E

Valamontes, ES

机构：

[1] NCSR Demokritos, Inst Microelect, Aghia Paraskevi 15310, Greece

[2] Inst Educ Technol, Aegaleo 12210, Greece

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期

关键词：

D O I：

10.1116/1.1321281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A methodology is described for the experimental and theoretical study of surface roughness (SR) and line-edge roughness (LER) and their relation for solution and plasma developed resist schemes. Experimental results for a negative-tone nonchemically amplified siloxane bilayer resist scheme are shown. In addition, a molecular-type simulation of SR and LER is presented. The simulator can follow the appearance of SR and LER after each process step and predict the roughness dependence on material properties and process conditions. The simulation results are compared with SR experimental data for a negative-tone chemically amplified epoxy resist. (C) 2000 American Vacuum Society. [S0734-211X(00)12406-0].

引用

页码：3292 / 3296

页数：5

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