Molecular dynamics simulation of gel formation and acid diffusion in negative tone chemically amplified resists

被引:7
作者
Patsis, GP
Glezos, N
机构
[1] Institute of Microelectronics, NCSR Demokritos, Aghia Paraskevi, 15310, Attiki
关键词
D O I
10.1016/S0167-9317(99)00104-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The knowledge of the structural changes that occur during the lithographic process using chemically amplified resists (CARs) is of great importance in process and resist optimization. Molecular dynamics (MD) is a suitable method for the simulation of these microscopic changes. A detailed description of the lithographic procedure including reaction propagation, acid diffusion, cage effects, free volume effects and developer selectivity can be included in such a model. The comparison of contrast curve data and acid diffusion measurements with MD modeling, leading to the evaluation of microscopic parameters are presented in this paper.
引用
收藏
页码:359 / 363
页数:5
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