Chemical-shift enhancement for strongly confined electrons in silicon nanocrystals

被引：9

作者：

Belyakov, Vladimir A. ^{[1
]}

Burdov, Vladimir A. ^{[1
]}

机构：

[1] Univ Nizhny Novgorod, Dept Theoret Phys, Nizhnii Novgorod 603950, Russia

来源：

PHYSICS LETTERS A | 2007年 / 367卷 / 1-2期

关键词：

silicon nanocrystal; donor; valley-orbit splitting; chemical shift; quantum confinement;

D O I：

10.1016/j.physleta.2007.02.065

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Theoretical study of the chemical shift and ground level splitting in spherical silicon quantum dot with a shallow donor has been carried out within the framework of the k-p method. We have found the great value of the chemical shift compared to the one in bulk. It is shown that the level splitting strongly depends on the dot radius and the donor position inside the nanocrystal. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：128 / 134

页数：7

共 22 条

[1] Donor states in modulation-doped Si/SiGe heterostructures [J].

Blom, A ;

Odnoblyudov, MA ;

Yassievich, IN ;

Chao, KA .

PHYSICAL REVIEW B, 2003, 68 (16)

[2] Poisson-Schrodinger and ab initio modeling of doped Si nanocrystals:: Reversal of the charge transfer between host and dopant atoms -: art. no. 045301 [J].

Blomquist, T ;

Kirczenow, G .

PHYSICAL REVIEW B, 2005, 71 (04)

[3] Electron and hole spectra of silicon quantum dots [J].

Burdov, VA .

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2002, 94 (02) :411-418

[4] First-principles study of n- and p-doped silicon nanoclusters -: art. no. 113303 [J].

Cantele, G ;

Degoli, E ;

Luppi, E ;

Magri, R ;

Ninno, D ;

Iadonisi, G ;

Ossicini, S .

PHYSICAL REVIEW B, 2005, 72 (11)

[5]

Delerue C., 2004, NANOSTRUCTURES THEOR

[6] QUANTUM CONFINEMENT IN SI NANOCRYSTALS [J].

DELLEY, B ;

STEIGMEIER, EF .

PHYSICAL REVIEW B, 1993, 47 (03) :1397-1400

[7] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[8] Electronic states in silicon quantum dots: Multivalley artificial atoms [J].

Hada, Y ;

Eto, M .

PHYSICAL REVIEW B, 2003, 68 (15)

[9] THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM [J].

KITTEL, C ;

MITCHELL, AH .

PHYSICAL REVIEW, 1954, 96 (06) :1488-1493

[10] THEORY OF DONOR LEVELS IN SILICON [J].

KOHN, W .

PHYSICAL REVIEW, 1955, 97 (06) :1721-1721

← 1 2 3 →