Boron implantation in situ annealing procedure for optimal p-type properties of diamond

被引：84

作者：

Fontaine, F ^{[1
]}

UzanSaguy, C ^{[1
]}

Philosoph, B ^{[1
]}

Kalish, R ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,IL-32000 HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 16期

关键词：

D O I：

10.1063/1.115879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Record values for high Hall mobility and for low compensation ratio of boron doped diamond by ion implantation are reported. These are achieved, following the suggestion by Prins, by low dose Boron implantation into cold diamond (-97 degrees C) and in situ rapid heating (1050 degrees C for 10 min) and by a further anneal at higher temperature (1450 degrees C for 10 min). Detailed evaluation of Hall effect data and of the temperature dependence of the resistivity over a wide temperature range (200 to 700 K) prove that this implantation/annealing scheme yields p-type behavior of the implanted layer with the highest hole mobility (385 cm(2)/V s, at room temperature) and the lowest compensation ratio (0.05) ever reported for diamond doped by ion implantation. (C) 1996 American Institute of Physics.

引用

页码：2264 / 2266

页数：3