Preparation of field effect transistor using nano-crystalline GaN

被引：19

作者：

Kobayashi, S ^{[1
]}

Nonomura, S ^{[1
]}

Abe, K ^{[1
]}

Ushikoshi, K ^{[1
]}

Nitta, S ^{[1
]}

机构：

[1] Gifu Univ, Dept Elect & Comp Engn, Gifu 50111, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

基金：

日本学术振兴会;

关键词：

nanocrystalline gallium nitride (nc-GaN); thin film transistor (TFT);

D O I：

10.1016/S0022-3093(98)00305-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bottom gate type thin film transistors using nano-crystalline GaN (nc-GaN) films were studied. The nc-GaN films were deposited by a reactive sputtering method and were annealed at 800 degrees C after depositions. The grain sizes were 10 to 20 nm by using Scherrer's formula. The threshold voltage (V(th)), the field effect mobility (mu) and the ratio of on-current and off-current (R(on/off)) were -0.4 V, 6 x 10(-2) cm(2)/V s and 3000, respectively. The fabricated nc-GaN TFT was a depletion type. The possibility for applying the nc-GaN film to high temperature operation is shown. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1245 / 1249

页数：5

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