Raman Scattering at Pure Graphene Zigzag Edges

被引:150
作者
Krauss, Benjamin [1 ]
Nemes-Incze, Peter [2 ]
Skakalova, Viera [1 ]
Biro, Laszlo P. [2 ]
von Klitzing, Klaus [1 ]
Smet, Jurgen H. [1 ]
机构
[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[2] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
关键词
Graphene; zigzag edges; Raman spectroscopy; anisotropic etching;
D O I
10.1021/nl102526s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or the zigzag crystallographic directions. A prerequisite to disclose this physics in experiment is to be able to produce devices with boundaries of pure chirality. Exfoliated flakes frequently exhibit corners with an odd multiple of 30 degrees, which raised expectations that their boundaries follow pure zigzag and armchair directions. The predicted Raman behavior at such crystallographic edges however failed to confirm pure edge chirality. Here, we perform confocal Raman spectroscopy on hexagonal holes obtained after the anisotropic etching of prepatterned pits using carbothermal decomposition of SiO2. The boundaries of the hexagonal holes are aligned along the zigzag crystallographic direction and leave hardly any signature in the Raman map indicating unprecedented purity of the edge chirality. This work offers the first opportunity to experimentally confirm the validity of the Raman theory for graphene edges.
引用
收藏
页码:4544 / 4548
页数:5
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