Glide and climb of dislocations in ultra-thin metal films

被引：5

作者：

de la Figuera, J

Schmid, AK

Pohl, K

Bartelt, NC

Carter, CB

Hwang, RQ

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain

[2] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[3] Univ New Hampshire, Dept Phys, Durham, NH 03824 USA

[4] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[5] Sandia Natl Labs, Livermore, CA 94551 USA

来源：

THERMEC'2003, PTS 1-5 | 2003年 / 426-4卷

关键词：

surface defects; misfit dislocations; scanning tunneling microscopy; surface diffusion;

D O I：

10.4028/www.scientific.net/MSF.426-432.3421

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Near-surface misfit dislocations can be directly observed by Scanning Tunneling Microscopy through the distortion on the positions of the atoms of the surface layer. In this way, the behavior of misfit dislocations can be followed in detail. Experiments performed in monolayer films of Cu on Ru(0001) show both climb and glide of the misfit dislocations with atomic resolution. The motion of the dislocations represents a novel pathway for surface diffusion in ultra-thin films.

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收藏

页码：3421 / 3426

页数：6

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