Magnetic ordering and distribution of Co in GaN

被引：9

作者：

Hong, JS ^{[1
]}

Wu, RQ ^{[1
]}

机构：

[1] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.68.233306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using the full potential linearized augmented plane wave method, we have explored the atomic distribution and the magnetic and optical properties of Co atoms in GaN. The Co atoms tend to form local compounds and a ferrimagnetic state.

引用

页数：4

共 21 条

[1] Epitaxial growth and properties of ferromagnetic co-doped TiO2 anatase [J].

Chambers, SA ;

Thevuthasan, S ;

Farrow, RFC ;

Marks, RF ;

Thiele, JU ;

Folks, L ;

Samant, MG ;

Kellock, AJ ;

Ruzycki, N ;

Ederer, DL ;

Diebold, U .

APPLIED PHYSICS LETTERS, 2001, 79 (21) :3467-3469

[2] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[3] Properties of Co-, Cr-, or Mn-implanted AIN [J].

Frazier, RM ;

Stapleton, J ;

Thaler, GT ;

Abernathy, CR ;

Pearton, SJ ;

Rairigh, R ;

Kelly, J ;

Hebard, AF ;

Nakarmi, ML ;

Nam, KB ;

Lin, JY ;

Jiang, HX ;

Zavada, JM ;

Wilson, RG .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) :1592-1596

[4] Materials design for semiconductor spintronics by ab initio electronic-structure calculation [J].

Katayama-Yoshida, H ;

Sato, K .

PHYSICA B-CONDENSED MATTER, 2003, 327 (2-4) :337-343

[5] Magnetic and structural properties of Co, Cr, V ion-implanted GaN [J].

Lee, JS ;

Lim, JD ;

Khim, ZG ;

Park, YD ;

Pearton, SJ ;

Chu, SNG .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) :4512-4516

[6] Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide [J].

Matsumoto, Y ;

Murakami, M ;

Shono, T ;

Hasegawa, T ;

Fukumura, T ;

Kawasaki, M ;

Ahmet, P ;

Chikyow, T ;

Koshihara, S ;

Koinuma, H .

SCIENCE, 2001, 291 (5505) :854-856

[7] Room temperature ferromagnetism in novel diluted magnetic semiconductor Cd1-xMnxGeP2 [J].

Medvedkin, GA ;

Ishibashi, T ;

Nishi, T ;

Hayata, K ;

Hasegawa, Y ;

Sato, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (10A) :L949-L951

[8] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].

Ohno, H ;

Shen, A ;

Matsukura, F ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365

[9]

Ohno H., 2002, JSAP International, P4

[10] Making nonmagnetic semiconductors ferromagnetic [J].

Ohno, H .

SCIENCE, 1998, 281 (5379) :951-956

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