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Properties of Co-, Cr-, or Mn-implanted AIN

被引：54
作者：
Frazier, RM
Stapleton, J
Thaler, GT
Abernathy, CR
Pearton, SJ [1 ]
Rairigh, R
Kelly, J
Hebard, AF
Nakarmi, ML
Nam, KB
Lin, JY
Jiang, HX
Zavada, JM
Wilson, RG
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[3] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
[4] USA, Res Off, Res Triangle Pk, NC 27709 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 03期
关键词：
D O I：
10.1063/1.1586987
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AlN layers grown on Al2O3 substrates by metalorganic chemical vapor desposition were implanted with high doses (3 x 10(16) cm(-2), 250 keV) of Co+, Cr+, or Mn+. Band-edge photoluminescence intensity at similar to6 eV was significantly reduced by the implant process and was not restored by 950degreesC annealing. A peak was observed at 5.89 eV in all the implanted samples. Impurity transitions at 3.0 and 4.3 eV were observed both in implanted and unimplanted AlN. X-ray diffraction showed good crystal quality for the 950degreesC annealed implanted samples, with no ferromagnetic second phases detected. The Cr- and Co-implanted AlN showed hysteresis present at 300 K from magnetometry measurements, while the Mn-implanted samples showed clear loops up to similar to100 K. The coercive field was <250 Oe in all cases. (C) 2003 American Institute of Physics.
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页码：1592 / 1596
页数：5
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