Properties of Co-, Cr-, or Mn-implanted AIN

被引：54

作者：

Frazier, RM

Stapleton, J

Thaler, GT

Abernathy, CR

Pearton, SJ ^{[1
]}

Rairigh, R

Kelly, J

Hebard, AF

Nakarmi, ML

Nam, KB

Lin, JY

Jiang, HX

Zavada, JM

Wilson, RG

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[3] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

[4] USA, Res Off, Res Triangle Pk, NC 27709 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 03期

关键词：

D O I：

10.1063/1.1586987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN layers grown on Al2O3 substrates by metalorganic chemical vapor desposition were implanted with high doses (3 x 10(16) cm(-2), 250 keV) of Co+, Cr+, or Mn+. Band-edge photoluminescence intensity at similar to6 eV was significantly reduced by the implant process and was not restored by 950degreesC annealing. A peak was observed at 5.89 eV in all the implanted samples. Impurity transitions at 3.0 and 4.3 eV were observed both in implanted and unimplanted AlN. X-ray diffraction showed good crystal quality for the 950degreesC annealed implanted samples, with no ferromagnetic second phases detected. The Cr- and Co-implanted AlN showed hysteresis present at 300 K from magnetometry measurements, while the Mn-implanted samples showed clear loops up to similar to100 K. The coercive field was <250 Oe in all cases. (C) 2003 American Institute of Physics.

引用

页码：1592 / 1596

页数：5

共 34 条

[11] Polaron percolation in diluted magnetic semiconductors [J].

Kaminski, A ;

Das Sarma, S .

PHYSICAL REVIEW LETTERS, 2002, 88 (24) :4

[12] AlN/AlGaInN superlattice light-emitting diodes at 280 nm [J].

Kipshidze, G ;

Kuryatkov, V ;

Zhu, K ;

Borisov, B ;

Holtz, M ;

Nikishin, S ;

Temkin, H .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) :1363-1366

[13] Ion-beam-produced damage and its stability in AlN films [J].

Kucheyev, SO ;

Williams, JS ;

Zou, J ;

Jagadish, C ;

Pophristic, M ;

Guo, S ;

Ferguson, IT ;

Manasreh, MO .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) :3554-3558

[14] Near-band-edge photoluminescence of wurtzite-type AlN [J].

Kuokstis, E ;

Zhang, J ;

Fareed, Q ;

Yang, JW ;

Simin, G ;

Khan, MA ;

Gaska, R ;

Shur, M ;

Rojo, C ;

Schowalter, L .

APPLIED PHYSICS LETTERS, 2002, 81 (15) :2755-2757

[15] Growth of highly c-axis textured AIN films on Mo electrodes for film bulk acoustic wave resonators [J].

Lee, SH ;

Lee, JK ;

Yoon, KH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (01) :1-5

[16] Band-edge photoluminescence of AIN epilayers [J].

Li, J ;

Nam, KB ;

Nakarmi, ML ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2002, 81 (18) :3365-3367

[17] Ferromagnetism in magnetically doped III-V semiconductors [J].

Litvinov, VI ;

Dugaev, VK .

PHYSICAL REVIEW LETTERS, 2001, 86 (24) :5593-5596

[18] Green electroluminescence from a Tb-doped AlN thin-film device on Si [J].

Lu, F ;

Carius, R ;

Alam, A ;

Heuken, M ;

Buchal, C .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2457-2460

[19] Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr [J].

Martin, AL ;

Spalding, CM ;

Dimitrova, VI ;

Van Patten, PG ;

Caldwell, ML ;

Kordesch, ME ;

Richardson, HH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (04) :1894-1897

[20] AlN/diamond heterojunction diodes [J].

Miskys, CR ;

Garrido, JA ;

Nebel, CE ;

Hermann, M ;

Ambacher, O ;

Eickhoff, M ;

Stutzmann, M .

APPLIED PHYSICS LETTERS, 2003, 82 (02) :290-292

← 1 2 3 4 →